The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 1982

Filed:

Mar. 10, 1980
Applicant:
Inventor:

Alan L Harrington, Glendale, CA (US);

Assignee:

TRW Inc., Los Angeles, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
427 89 ; 156664 ; 156665 ; 427 91 ; 427125 ; 427 90 ; 430313 ;
Abstract

A method for adhering a passivation layer to gold regions in a semiconductor device. The method comprises the steps of providing a semiconductor device having at least one gold region formed thereon. A layer of a metal reactive with the gold is then deposited over the gold region so as to form a gold-reactive metal interface region. The gold and metal are then reacted at the interface region. Any metal which does not react is removed so as to expose a reacted interface region. Finally, a layer of passivation material is deposited over the exposed reacted interface region. Because the passivation material is then in contact with reacted gold regions, its adherence thereto is substantially increased.


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