The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 1982

Filed:

Feb. 13, 1979
Applicant:
Inventors:

Marie A Di Forte, Paris, FR;

Michel Papuchon, Paris, FR;

Claude Puech, Paris, FR;

Assignee:

Thomson-CSF, Paris, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
331 / ; 350 9611 ;
Abstract

A semiconductor laser particularly useful for frequency multiplexing in optical telecommunications having a distributed resonator supplying from a single etched grating, two or more radiations of different wavelengths. The laser comprises a junction formed by an n-type substrate, a p-type radiation-confinement region, and a surface region, a grating being etched at the interface between the confinement region and the surface region. Useful elementary bands of the junction for the attainment of the laser effect are fixed by proton implantation in the surface region of the junction. The elementary band-type regions are convergent and form, with the perpendicular to the grooves of the grating, angles that are determined so that the spacing along the various bands has a specified value linked directly to the wavelength of the corresponding emitted radiation.


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