The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 1982
Filed:
Feb. 07, 1980
Applicant:
Inventor:
Osamu Yamashiro, Ohmiya, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F / ; H03B / ;
U.S. Cl.
CPC ...
330264 ; 3311 / ; 330288 ;
Abstract
A complementary amplifier circuit includes a p-channel MISFET and an n-channel MIS connected in series. The gate of the p-channel FET transistor is D.C. biased by a high impedance resistor connected between the gate and drain electrodes, and the gate of the n-channel FET is D.C. biased by a current mirror circuit formed by another n-channel FET. This complementary amplifier circuit has the advantages that the operational lower limit voltage thereof is equal to the threshold voltage of one of the MOSFETs and that stabilized operation of the amplifier is easily obtained.