The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 1981

Filed:

Sep. 10, 1980
Applicant:
Inventors:

Henry F Gray, Alexandria, VA (US);

Richard F Greene, Bethesda, MD (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B01J / ; H01J / ;
U.S. Cl.
CPC ...
29580 ; 29 2514 ; 29 2518 ; 2956 / ; 156647 ; 313309 ; 313336 ; 313351 ;
Abstract

A method of manufacturing a field-emitter array cathode structure in which substrate of single crystal material is selectively masked such that the unmasked areas define islands on the underlying substrate. The single crystal material under the unmasked areas is orientation-dependent etched to form an array of holes whose sides intersect at a crystallographically sharp point. Following removal of the mask, the substrate is covered with a thick layer of material capable of emitting electrons which extends above the substrate surface and fills the holes. Thereafter, the material of the substrate underneath the layer of electron-emitting material is etched to expose a plurality of sharp field-emitter tips.


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