The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 1981

Filed:

Jul. 03, 1980
Applicant:
Inventors:

Kenneth Chang, Hopewell Junction, NY (US);

George T Chiu, Wappingers Falls, NY (US);

Anthony Hoeg, Jr, Cary, NC (US);

Linda H Lee, Poughkeepsie, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03C / ;
U.S. Cl.
CPC ...
430314 ; 156643 ; 156646 ; 156656 ; 1566591 ; 1566611 ; 2041 / ; 430316 ; 430317 ; 430318 ; 430323 ; 430324 ;
Abstract

A process for forming a layer of a metallurgy interconnection system on a substrate. The process involves forming a first electrically insulative layer of an organic polymerized resin material on the substrate, forming a second thin layer on the first layer which is resistant to dry etching conditions which are effective to etch the first layer, depositing a photoresist layer on the second layer, exposing the photoresist to form an inverse pattern of a desired metallurgy pattern and developing the photoresist, reactive ion etching the resultant exposed areas of the first and second layers, depositing a blanket continuous conductive metal layer over the hills and valleys of the pattern resulting from reactive ion etching, applying a planarizing photoresist layer, etching the photoresist to expose high spots of the metal layer, and etching the metal high spots to a depth sufficient to expose the surface of the second layer.


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