The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 1981
Filed:
Oct. 10, 1979
Applicant:
Inventors:
Paul C Moutou, Paris, FR;
Jacques Montel, Paris, FR;
Assignee:
Thomson-CSF, Paris, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
427 84 ; 156643 ; 156662 ; 2191 / ; 2504923 ; 427 88 ; 427 93 ; 430314 ;
Abstract
A method for virtually eliminating contact resistances in particular at very high frequency, for instance in the case of source and drain contacts of a field effect transistor. The method consists in creating a matrix of depressions or 'dishes', for example 1 to 6 microns in diameter, separated by intervals of some few microns. In a first step, windows are opened in an insulating layer by an etching operation. In a second step, by ion machining, angular profiles are carved in the bottom of the dishes for promoting tunnel effect. In a last step a metal layer is deposited and enshrouds the matrix.