The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 1981
Filed:
Apr. 29, 1980
Lothar Schrader, Munich, DE;
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Abstract
A field effect transistor having an extremely short channel length in which a doped semiconductor layer of one conductivity type has oppositely doped source and drain zones in a surface side thereof. A first gate electrode is separated from the semiconductor layer surface by an insulating layer. The first gate electrode covers the region between the source and drain zones with the exception of a strip-like semiconductor region directly adjoining the source zone. A second gate electrode is provided above the strip-like semiconductor region and is insulated from the first gate electrode by a second insulating layer. The first gate electrode is connected to a bias voltage source and the second gate electrode is arranged to be connected to a control voltage.