The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 1981
Filed:
Jul. 24, 1979
Applicant:
Inventors:
Giora Yaron, Irvine, CA (US);
LaVerne D Hess, Thousand Oaks, CA (US);
Assignee:
Hughes Aircraft Company, Culver City, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
427 35 ; 2191 / ; 427 38 ; 427 531 ; 427 86 ; 427 89 ; 427 90 ; 427 93 ; 427 94 ; 427 96 ;
Abstract
In double conductor micro-electronic structures, prior to the low temperature deposition or growth of an insulating layer over a polycrystalline or amorphous surface, the surface is annealed using a beam of radiant energy, which causes it to become very smooth, thereby removing any surface spikes. The insulating layer placed thereover has remarkably improved insulation qualities heretofore unattainable at low temperatures. The beam of radiant energy is preferably applied in bursts of energy lasting for a sufficiently short duration so that implanted impurities in the silicon substrate do not redistribute.