The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 1981
Filed:
Aug. 11, 1980
Applicant:
Inventor:
Murray L Trudel, Centerville, OH (US);
Assignee:
NCR Corporation, Dayton, OH (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 29571 ; 2957 / ; 29580 ; 148187 ; 156626 ; 156657 ; 156662 ; 427 95 ; 427399 ;
Abstract
A process for forming polysilicon-to-substrate contacts. The process permits the use of a polysilicon-to-substrate contact mask and eliminates the exposure of the substrate in the contact regions to the polysilicon etch. The polysilicon contact-forming conductors are formed from a layer of polysilicon by etching partially through the layer to leave a residual layer surrounding and defining the conductors; converting the residual polysilicon to oxide; and selectively etching the oxide. The result is a damage-free substrate contact region exhibiting reduced junction leakage current.