The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 1981
Filed:
Mar. 25, 1980
Reinhard Tielert, Munich, DE;
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Abstract
A process is disclosed for the production of a MIS field effect transistor having an adjustable, extremely short channel length. The effective channel length is set by superimposing at least two implantation steps employing differing implantation energy and doses. A gate electrode which possesses vertically etched edges is used as an implantation mask for the source implantation and drain implantation. The process allows a MOS structure having an arbitrarily small effective channel length to be constructed by exploiting the lateral scattering which occurs during the ion implantation without influence by mask tolerances. The process corresponding to the theory of the invention provides the possibility of constructing a DIMOS-similar transistor having typical structural dimensions in the region of 1 .mu.m and less.