The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 1981
Filed:
Nov. 06, 1979
Horng-Sen Fu, Sunnyvale, CA (US);
John L Moll, Palo Alto, CA (US);
Juliana Manoliu, Palo Alto, CA (US);
Hewlett-Packard Company, Palo Alto, CA (US);
Abstract
The present invention provides a silicon gate FET and associated integrated circuit structure in which a second level of polysilicon is selectively oxidized to provide insulating regions where desired. Regions of the polysilicon which were not oxidized are suitably doped to function as electrical interconnects to the source and drain regions in the substrate and to the gate. In the preferred embodiment, a metallic interconnection is made between the gate and drain or source region with the second level of polysilicon.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile