The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 1981
Filed:
Oct. 29, 1979
John A Copeland, III, Fair Haven, NJ (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
Longitudinal mode control is achieved in a heterojunction semiconductor laser (201-208) by doping the active region (203) of the laser with a deep level electron or hole trap. The trap is chosen to have a carrier capture cross section .sigma..sub.e and an optical cross section .sigma..sub.o such that the ratio of P, the average number of photons per cubic centimeter, to P.sub.s is between 0.1 and 100 where P.sub.s is equal to (N.sigma..sub.e V/.sigma..sub.o C.sub.o), N is the carrier density, V is the carrier thermal velocity, and C.sub.o is the speed of light in the material. In a specific embodiment the active region is bombarded by photons to achieve deep level electron traps in the active region.