The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 1981
Filed:
Jan. 11, 1980
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
A reference voltage generator comprising two MOS-type transistors T.sub.1 ' and T.sub.2 ' produced on the same substrate, the channels of these transistors having the respective lengths L.sub.1 and L.sub.2 and the respective widths Z.sub.1 and Z.sub.2, one of the transistors T.sub.2 ' having a channel, only one dimension of which is of the same order of magnitude as the corresponding dimension of the extension, relative to the source and drain of this transistor, of the space charge zone appearing round this source and this drain when the transistor is operating, the other dimension being large in relation to the corresponding dimension of said extension of the space charge zone, the other transistor T.sub.1 ' having a channel the two dimensions of which are large in relation to the corresponding dimensions of the extension, relative to the source and drain of this transistor, of the space charge zone appearing round this source and drain when the transistor is operating, and further comprising means for providing the difference in the threshold voltages of the transistors T.sub.1 ' and T.sub.2 ', this difference in threshold voltages representing the reference voltage.