The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 1981
Filed:
Sep. 21, 1979
Yoshitaka Matsuoka, Ibaraki, JP;
Michitaka Shimazoe, Ibaraki, JP;
Yoshimi Yamamoto, Ibaraki, JP;
Mitsuo Ai, Ibaraki, JP;
Keiji Miyauchi, Ibaraki, JP;
Hideyuki Nemoto, Ibaraki, JP;
Masatoshi Tsuchiya, Ibaraki, JP;
Masanori Tanabe, Ibaraki, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A pressure transducer comprising a silicon diaphragm on which a semiconductor strain gauge is formed and which has a diaphragm portion deformable in response to a pressure, an insulating support which is made of borosilicate glass having the silicon diaphragm rigidly mounted thereon and which is provided with a pressure introducing hole in its central part, a metallic support which is cylindrical, which is made of an iron-nickel alloy similar in the thermal expansion coefficient to the borosilicate glass and on which the glass insulating support is rigidly mounted, and a metallic housing within which the integrated structure consisting of the silicon diaphragm, the glass insulating support and the metallic support is arranged; the silicon diaphragm, the insulating support and the metallic support being joined by the anodic bonding, the metallic support being rigidly welded to the metallic housing at its lower end part.