The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 1981
Filed:
Mar. 14, 1980
Applicant:
Inventors:
Michael R Splinter, Silverado, CA (US);
Richard F Palys, Placentia, CA (US);
Moiz M Beguwala, Placentia, CA (US);
Assignee:
Rockwell International Corporation, El Segundo, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H05B / ;
U.S. Cl.
CPC ...
148-15 ; 148187 ; 2191 / ; 357 91 ; 427 451 ; 427 531 ;
Abstract
Briefly, and in general terms, the present invention provides a process for fabricating a semiconductor device, the device includes a semiconductor substrate having a major surface including an ion implanting region, wherein one fabrication step in the process subsequent to the formation of the ion implantation region is to direct a beam of microwave radiation at the device for annealing the ion implanted regions.