The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 1981
Filed:
Jun. 02, 1980
Minoru Arai, Tokyo, JP;
Akio Baba, Fuchu, JP;
Tokyo Print Co., Ltd., Tokyo, JP;
Abstract
A method of manufacturing a printed wiring board completely free from trouble of solder bridging. The printed wiring board of the present invention is provided with a raised portion of solder resist ink in the form of a ridge around the periphery of the land to be printed or at an area between adjacent lands to be soldered, the said raised portion being an extension of a solder resist thin layer coated on the insulator base board exclusive the said land. The method for manufacturing the aforesaid printed wiring borad comprises the steps of placing an ink-permeable mesh screen above the insulator base board with an anti-ink-permeable membrane piece closely contacted with the land to be printed, the said mesh screen being integrally provided with the said anti-ink-permeable membrane piece having the same shape and located at the same position as that the said land, applying resist ink over the said mesh screen, and performing printing operation with the aid of a squeezing device which serves to depress the mesh screen onto the insulator base board is also provided in accordance with the present invention. Protrusion of the said integrally fastened anti-ink-permeable membrane piece from the said mesh screen, that is, the substantial thickness of the said membrane piece is specified in the range of 40 to 100 .mu.m.