The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 1981
Filed:
Oct. 03, 1979
Applicant:
Inventor:
Robert P Chang, Warren, NJ (US);
Assignee:
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; C01B / ; B05D / ;
U.S. Cl.
CPC ...
204164 ; 423335 ; 427 38 ; 427 82 ;
Abstract
The plasma growth rate of native layers, such as oxide and nitride, on silicon is enhanced by the addition of fluorine. An increase in growth rate is obtained, and the oxide growth rates on doped and undoped portions of the silicon substrate are substantially the same. The fluorine is typically added by means of a fluorinated compound, typically CF.sub.4, comprising 0.01 to 5 molecular percent of the plasma. Lower substrate temperatures, typically less than 600 degrees C., may be used, resulting in less warpage of the wafer and less diffusion of dopants.