The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 1981
Filed:
Mar. 18, 1980
Susumu Koike, Kawachinagano, JP;
Hitoo Iwasa, Ibaraki, JP;
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Abstract
A method of making a light emitting diode by a liquid phase epitaxial growth is disclosed, the method comprising the steps of growing a first p-type epitaxial layer from a gallium melt containing Zn, and Ga.sub.2 O.sub.3 and GaP on an n-type GaP substrate, or on an n-type epitaxial layer formed on an n-type GaP substrate, at a cooling rate greater than 3.degree. C./min., and growing a second p-type epitaxial layer from the gallium melt on the first p-type epitaxial layer at a cooling rate less than 1.5.degree. C./min. This procedure makes the p-type carrier density high at the surface region of the second p-type epitaxial layer and the density of Zn-O pairs high in the first p-type epitaxial layer.