The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 1981
Filed:
Jun. 16, 1980
Applicant:
Inventor:
Sel Colak, Briarcliff Manor, NY (US);
Assignee:
North American Philips Corporation, New York, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 23 ; 357 52 ; 357 13 ;
Abstract
A lateral double-diffused MOS transistor includes a field-shaping semiconductor layer which serves to improve the breakdown voltage and/or on-resistance characteristics of the device. The field-shaping layer redistributes the electrical field in the device during operation in order to eliminate electrical field crowding in portions of the device where breakdown would otherwise first occur. The field shaping layer may be a buried layer, a surface layer, or a composite layer having both buried and surface layer portions.