The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 1981

Filed:

Jan. 16, 1980
Applicant:
Inventors:

Shizuya Matsuura, Nara, JP;

Fumiya Konishi, Toyonaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
2504922 ; 250398 ;
Abstract

In a process for projecting or irradiating a pattern on a resist film or the like on a substrate such as a semiconductive wafer, the entire area of the resist film is subjected to a pre-exposure at an intensity less than a sensitivity or a critical exposure level of the resist film at which the resist at a selected (exposed or unexposed) area may be completely dissolved away and then a desired pattern is projected or irradiated on the pre-exposed resist film. These steps may be reversed. In both cases, the apparent sensitivity of the resist film may be improved so that the pattern making time may become very short. An apparatus for carrying out the above process is also disclosed.


Find Patent Forward Citations

Matsuura, Shizuya. (1981). Process and apparatus for making fine-scale patterns (U.S. Patent No. 4298803). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4298803

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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