The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 1981
Filed:
Jun. 05, 1980
Koichiro Nakajima, Koganei, JP;
Masaharu Watanabe, Yokosuka, JP;
Abstract
A method for selectively growing a liquid phase epitaxial layer on a semiconductor substrate comprises a first step of supplying a liquid phase epitaxial solution in a chamber of an upper body and supplying a semiconductor substrate on which is selectively coated an insulating layer in a recess in an under body, the upper surface of which constituting the bottom of said chamber; a second step of heating said semiconductor substrate and said solution to a predetermined temperature and sliding said upper body and said under body relative to each other so as to position said chamber above said recess, thereby effecting contact between said solution and said semiconductor substrate; a third step of effecting said sliding again so as to separate said recess and said chamber so that said solution remains on the regions of said semiconductor substrate surface on which said insulating layer is not coated; and a fourth step of cooling said solution and said semiconductor substrate at a constant cooling rate so as to grow a liquid phase epitaxial layer.