The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 1981
Filed:
Nov. 02, 1979
Applicant:
Inventors:
Assignee:
Fuji Photo Film Co., Ltd., Minami-ashigara, JP;
Primary Examiner:
Int. Cl.
CPC ...
B05P / ; G03G / ;
U.S. Cl.
CPC ...
427 75 ; 338 15 ; 430127 ; 430128 ; 430133 ; 430 84 ; 427 39 ;
Abstract
In the course of producing a thin film of amorphous silicon by high frequency sputtering elemental silicon under an atmosphere containing at least hydrogen gas, the temperature of the base plate onto which the amorphous silicon is deposited is maintained at a temperature of about 50.degree. C. to 150.degree. C. The thus obtained silicon film possesses not only photoconductivity sufficient for use as a photoconductor but also a large difference between photoconductivity and dard conductivity. In addition, a photoconductor of an amorphous silicon thin film can be produced at low cost without environmental pollution problems.