The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 1981
Filed:
Aug. 28, 1979
Minami Takeuchi, Tokyo, JP;
Minoru Kuriki, Kawasaki, JP;
Abstract
A reverse conducting thyristor comprises a thyristor section, a diode section and a separator section. The three sections are integrally formed into a cylindrical body. The thyristor section is constituted by a first region of a first conductivity type, a second region of the second conductivity type, a third region of the first conductivity type, a main emitter region of the second conductivity type, a cathode electrode, an auxiliary emitter region, an auxiliary gate electrode and a main gate electrode. The first region is formed on a first electrode, the second region on the first region, and the third region on the second region. The main emitter region is so formed in the third region as to have its surface on the same level with that of the third region. The auxiliary emitter region is similarly formed in the third region and faces at least a part of that periphery of the main emitter region which does not contact the separator section. The cathode electrode is formed on the main emitter region. The auxiliary gate electrode is formed partly on the third region and partly on the auxiliary emitter region and is arched concentrically with the cylindrical body so as to surround at least a part of said periphery of the main emitter region. The main gate electrode is formed on that surface portion of the third region which is adjacent to that lateral surface of the auxiliary emitter region which does not face the main emitter region. The diode section comprises a fourth region of the second conductivity type, a fifth region of the first conductivity type and a second electrode. The fourth region is formed on the first electrode, the fifth region on the fourth region, and the second electrode on the fifth region. The separator section is a plate which is constituted by a sixth region of the first conductivity type, a seventh region of the second conductivity type and an eight region of the first conductivity type. The sixth region is formed on the first electrode, the seventh region on the sixth region, and the eighth region on the seventh region.