The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 1981
Filed:
Mar. 13, 1980
Erich Kasper, Senden, DE;
Licentia Patent-Verwaltungs-G.m.b.H., Frankfurt am Main, DE;
Abstract
In a method of manufacturing a semiconductor/glass composite material, a glass substrate is covered partially by a covering layer, a semiconductor is connected by pressure and heat to the surface of the substrate not covered by the covering layer, and the semiconductor is then etched away by means of etch polishing to the thickness of the covering layer. The covering may be silicon dioxide, and may be applied to substrate by sputtering or by deposition from the gas phase. The etching solution is NH.sub.4 OH and H.sub.2 O.sub.2 in the ratio 700 to 1. The composite material may be used as a photocathode in an image converter or image intensifier tube.