The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 1981
Filed:
Nov. 15, 1976
Applicant:
Inventor:
Gerald D Rogers, Houston, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B01J / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ; 2957 / ;
Abstract
An MOS capacitor for N-channel silicon gate integrated circuits employs a polycrystalline silicon layer as one plate, and a silicon oxide dielectric. The lower plate consists of a region which is implanted by an ion beam to produce a depleted region. This device has a constant capacitance regardless of gate voltage in normal operating logic levels.