The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 1981
Filed:
Mar. 21, 1979
Applicant:
Inventors:
Jean Marine, Grenoble, FR;
Michel Ravetto, Grenoble, FR;
Assignee:
Commissariat a l'Energie Atomique, Paris, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 17 ; 29572 ; 2957 / ; 148-15 ; 357 30 ;
Abstract
A layer of thickness x.sub.j is formed at the surface of a wafer of p-type ZnTe semiconductor material and compensated so as to provide insulation with high resistivity. Ions are implanted with sufficient energy to form a trapping region of thickness x.sub.1 at the surface of the semiconductor and to form beneath the trapping region an insulating region of thickness x.sub.3, with x.sub.1 <x.sub.j. The diode has high efficiency both for emission of light having well-defined wavelengths and for current generation when subjected to light radiation.