The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 1981
Filed:
Mar. 12, 1980
Kenneth A Ports, Indialantic, FL (US);
Harris Corporation, Melbourne, FL (US);
Abstract
A memory cell having two mesa bipolar transistors separated by a valley in which two doped polycrystalline load resistors are formed. Doped polycrystalline conductors connect the resistors to a respective backside metallic collector contact which is between a support structure and a transistor and to a respective base. The cell is fabricated by removing a substrate upon which was formed an epitaxial layer and top support, applying a backside metallic layer, forming a bottom support, removing the top support, etching the epitaxial layer to form mesas, etching the backside metal to form discrete contacts, and forming multi-level resistors and conductors in the valley between the mesa transistors separated by insulative material.