The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1981
Filed:
Jan. 07, 1980
Harry J Boll, Berkeley Heights, NJ (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
This invention involves a capacitor memory cell (C.sub.S) of, typically the metal-oxide-semiconductor (MOS) capacitor type, which is accessed for reading and writing by means of an access network connected to the memory cell through a gating transistor (T.sub.1), and which is provided with an independent refresh network for maintaining the memory state of the cell in the absence of an access writing signal. The refresh network includes a pair of MOSFET (Metal Oxide Semiconductor Field-Effect Transistors) transistors (T.sub.2, T.sub.3) connected between the MOS capacitor and an A.C. refresh line which is independent of the electrical access network. Either a 'full' or 'empty' capacitor memory state, binary digital 1 or 0, respectively, is maintained without the need for interrupting the reading and writing of the MOS capacitor.