The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1981
Filed:
Jan. 16, 1979
Johannes A Appels, Eindhoven, NL;
Marnix G Collet, Eindhoven, NL;
Paul A Hart, Eindhoven, NL;
Johannes F Verhoeven, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
Semiconductor devices, one having a planar bipolar high-voltage semiconductor circuit element comprising an island-shaped region of one conductivity type. On its lower side the island-shaped region is bounded by a first pn junction having a comparatively high breakdown voltage, and laterally by a second pn junction having a comparatively low breakdown voltage. The doping and the thickness of the island-shaped region are so small that the region is entirely depleted before breakdown occurs. The second semiconductor device having a field effect transistor of the lateral or vertical type with an island-shaped region having a contact region and bounded at the bottom by a pn junction having a comparatively high breakdown voltage and laterally by a second pn junction having a comparatively low breakdown voltage. The doping and thickness of the island-shaped region are so small that the region situated between the second pn junction and the contact region is fully depleted before breakdown at the second pn junction occurs.