The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1981
Filed:
May. 19, 1980
Applicant:
Inventors:
Jun-ichi Nishizawa, Sendai, JP;
Mitsuhiro Kimura, Sendai, JP;
Assignee:
Semiconductor Research Foundation, Sendai, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ; C30B / ;
U.S. Cl.
CPC ...
428446 ; 148 33 ; 156D / ; 428697 ; 428700 ; 501 86 ;
Abstract
A single crystal substrate for epitaxial growth thereon of a semiconductor layer. The substrate consists essentially of sapphire (aluminum oxide) and scandium oxide (Sc.sub.2 O.sub.3). The invention also provides the aforesaid single crystal substrate in combination with a semiconductor epitaxially grown thereon. The preferred semiconductors are silicon, gallium phosphide, aluminum phosphide and zinc sulphide.