The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 1981
Filed:
Apr. 18, 1980
Applicant:
Inventors:
Kenneth A Ports, Indialantic, FL (US);
William G Lucas, Indian Harbour Beach, FL (US);
Assignee:
Harris Corporation, Melbourne, FL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148187 ; 2957 / ; 29578 ; 148-15 ;
Abstract
Low resistance contact paths to selected buried layers in dielectrically isolated islands are formed by V-etching the selected island moats in a substrate, non-selectively diffusing impurities into the surface of the substrate and selected moats, V-etching to form all the moat structure, forming a dielectric layer on said surface and moats, applying support material to over-fill said moats and cover said surface, removing the opposite surface of said substrate to expose support material, and forming devices in said opposite surface.