The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 1981
Filed:
May. 19, 1980
Arkady A Belsky, Moscow, SU;
Alexandr V Eljutin, Moscow, SU;
Valery N Zubkov, Podolsk Moskovskoi oblasti, SU;
Alexandr I Konjukov, Moscow, SU;
Lidia I Krasinskaya, Moscow, SU;
Elena A Nekrasova, Moscow, SU;
Konstantin S Nizharadze, Moscow, SU;
Larisa F Markova, Vidnoe Moskovskoi oblasti, SU;
Mirra G Mirskaya, Moscow, SU;
Alexei V Frolov, Moscow, SU;
Evgeny A Judin, Moscow, SU;
Other;
Abstract
A process for producing high-purity indium which comprises vacuum melting of the metal in two stages: in the first stage at a temperature of from 850.degree. to 940.degree. C. for 1-5 hours; in the second stage at a temperature of from 950.degree. to 1,100.degree. C. for 0.5-2 hours. Thereafter, the metal is subjected to an electrochemical refinement in a hydrochloric acid solution, while the residue of indium evolved on the cathode is remelted by introducing into molten indium at a temperature of from 160.degree. to 400.degree. C.