The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 1981
Filed:
Mar. 19, 1979
Felix Diamand, Paris, FR;
Thomson-CSF, Paris, FR;
Abstract
A semiconductor structure comprising two conventional electrodes of an avalanche diode and furthermore a supplementary electrode. In a preferred embodiment the conventional and supplementary electrodes form two combs of which the teeth are intermingled and separated from one another by intervals of the same order of magnitude as the thickness of the active layer wherein the avalanche rises. There are two functioning cases. In a first case the biassing voltage applied to the supplementary electrode is lower than the breakdown voltage and the operating conditions of the avalanche diode is optimised or controlled as in a modulator or a frequency shifter. In a second case the biassing voltage applied to the supplementary electrode is higher than the breakdown voltage and the power and/or efficiency of an amplifier or oscillator using such a structure is increased.