The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 1981

Filed:

Feb. 04, 1980
Applicant:
Inventor:

Mordehai Heiblum, Yorktown Heights, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G / ;
U.S. Cl.
CPC ...
357 12 ; 357-4 ; 357 16 ; 357 57 ;
Abstract

A three-terminal semiconductor device having a switching time in the vicinity of 10.sup.-12 seconds and exhibiting a dynamic negative resistance is made up of a thin barrier region in the emitter section having a barrier height that is higher than a wider barrier region in the collector section separated by a base region having a width comparable to the mean-free path length of a majority carrier. The device employs quantum mechanical tunneling as the dominant current flow mechanism from the emitter region to the base region and hot majority carrier transfer as the dominant current flow mechanism through the base region to the collector region.


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