The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 1981
Filed:
Dec. 31, 1979
Applicant:
Inventor:
Theodore D Moustakas, Berkeley Heights, NJ (US);
Assignee:
Exxon Research & Engineering Co., Florham Park, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156657 ; 156662 ; 2041 / ; 252 791 ;
Abstract
Amorphous silicon is selectively etched by concurrently exposing the silicon to a ionized plasma containing hydrogen and heating the silicon to a temperature of between about 150.degree. C. to about 350.degree. C. In one embodiment the selective etching technique is utilized to texture the surface of the amorphous silicon reducing the reflectivity thereof to less then about 5%.