The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 1981

Filed:

Jun. 30, 1980
Applicant:
Inventors:

Joseph J Fatula, Jr, Beacon, NY (US);

Stanley Roberts, Shelburne, VT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
156628 ; 29571 ; 29580 ; 29590 ; 156657 ; 156662 ; 357 67 ; 427 93 ; 427399 ;
Abstract

A method of forming a refractory metal silicide pattern on a substrate by (1) forming a blanket layer of SiO.sub.2 on the substrate, (2) depositing a blanket layer of polycrystalline Si over the SiO.sub.2 layer, (3) defining a pattern in the blanket Si layer thereby exposing selected areas of the SiO.sub.2 layer, (4) depositing a blanket layer of refractory metal silicide on the substrate over the SiO.sub.2 and Si layers, (5) heating the substrate in an oxidizing environment to a temperature sufficient to oxidize the metal silicide layer over the Si to form an upper layer of SiO.sub.2 and to convert the metal silicide layer overlying the SiO.sub.2 layer to a metal rich SiO.sub.2 layer, and exposing the oxidized surface to an etchant that selectively etches away the metal rich SiO.sub.2 layer.


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