The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 1981
Filed:
Dec. 26, 1978
Applicant:
Inventors:
Levy Gerzberg, Palo Alto, CA (US);
James D Meindl, Los Altos, CA (US);
Assignee:
Board of Trustees of Leland Stanford Jr. University, Stanford, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 51 ; 357 23 ; 357 50 ; 357 59 ; 330286 ;
Abstract
A distributed resistor-capacitor device which is highly reproducible with near ideal electrical characteristics including a substrate, an insulating layer on a major surface of the substrate, and a polycrystalline semiconductor material on the insulating layer. The polycrystalline layer is the resistor and cooperates with the substrate as the capacitor. Fabrication of the device is compatible with integrated circuit fabrication and can be used with field-effect and bipolar junction transistors.