The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 1981
Filed:
Mar. 12, 1979
Ira Deyhimy, Thousand Oaks, CA (US);
Richard C Eden, Thousand Oaks, CA (US);
James S Harris, Jr, Thousand Oaks, CA (US);
Lucia O Bubulac, Thousand Oaks, CA (US);
Rockwell International Corporation, El Segundo, CA (US);
Abstract
A charge coupled device has a semi-insulating semiconductor for a substrate. Resistivity of the semiconductor is at least 10.sup.6 ohm cm. A semi-conductive layer is grown epitaxially or is implanted on the substrate to form a thin, active, charge transport layer. A row of parallel, closely spaced gates on the charge transport layer provides individual storage wells in the charge transport layer. In a preferred embodiment, ohmic contacts adjacent the first and last gates in the row of gates provide a means for injecting a signal into the charge transport layer and a means for detecting the signal. Preferably, the substrate is semi-insulating GaAs and the gates are Schottky barrier gates.