The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 1981
Filed:
Nov. 13, 1975
Egon E Loebner, Palo Alto, CA (US);
Paul E Greene, Mountain View, CA (US);
Hewlett-Packard Company, Palo Alto, CA (US);
Abstract
Useful semiconductor materials in which a p-n junction may be formed are made from compositions of the quaternary Ga.sub.y In.sub.1-y As.sub.1-x P.sub.x compound alloy system having values of x and y greater than 0.005 and less than 0.995 or having a value of x equal to 1.0 and a value of y from 0.45 to 0.80. In making these semiconductor materials a layer of selected composition of this compound alloy system is epitaxially grown on a substrate having a lattice constant substantially equal to that of the selected composition by substantially following an isolattice constant contour to the region of selected composition in the alloy system. Injection electroluminescent diodes are fabricated from these semiconductor materials by forming a p-n junction in the layer of selected composition and by forming electrical terminals in contact with the substrate and the layer of selected composition on opposite sides of the p-n junction.