Process for forming semiconductor devices using electron-sensitive

Abstract

The specification describes a process for defining a predetermined region on and above a substrate by using a resist pattern having a controlled line profile. First, a composite electron-beam sensitive resist comprising a bottom layer of resist, a middle layer of a chosen conductive material, and a top layer of resist is formed on a selected substrate. The substrate with the composite resist is exposed to a beam of electrons to simultaneously define a predetermined pattern in the top and bottom layers of the resist. Next, a first chosen solvent is applied for a first predetermined period of time to develop the pattern in the top layer of resist, with the layer of conductive material protecting the bottom layer of resist from exposure of the first chosen solvent. Then, the portion of the conductive layer which is exposed after development of the top resist layer, is removed. Finally, a second chosen solvent is applied for a second predetermined period of time to develop the pattern in the bottom layer of resist and to thereby form a T-shaped profile in the composite resist, which defines the desired region on and above the substrate. In a preferred embodiment of the present invention, metal is subsequently deposited on the defined region of the substrate to form a metal pattern having the same controlled profile as the composite resist.