The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 1981
Filed:
Sep. 10, 1979
Lothar Schrader, Munich, DE;
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Abstract
An insulated gate field effect transistor has a channel region in a doped semiconductor substrate covered by a thin film region of the insulating layer and has borders defined by thick film regions disposed parallel to the source-drain direction. The transistor further includes a pair of narrow strip zones in the region of the channel borders also running parallel to the source-drain direction which are doped weaker than and oppositely to the substrate doping to partially compensate the substrate doping and in transistors of the depletion type can overcompensate the substrate doping. The compensation provided by the strip zones decreases the substrate control effect so that the effective channel width of the transistor is less susceptible to fluctuations in operating voltages.