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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4282268 B1

PDFFull Text
Date of Patent:
Aug. 04, 1981

Filed:

Jun. 06, 1978

Method of depositing a silicon oxide dielectric layer

Applicant:
Inventors:

Eldon B Priestley, East Windsor, NJ (US);

Patrick J Call, Princeton, NJ (US);

Assignee:

RCA Corporation, New York, NY (US);

Attorneys:

Christoffersen; H.

Morris; Birgit E.

Bloom; Allen

Primary Examiner:

Bernard D Pianalto

Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 39 ; 427 40 ; 427124 ; 427295 ; 427296 ;
Abstract

This invention pertains to a method of depositing a silicon oxide, such as silicon dioxide, dielectric layer on a substrate by utilizing a glow discharge and a dielectric precursor having the formula ##STR1## wherein R.sub.1 is selected from the group consisting of H and --CH.sub.3, R.sub.2 and R.sub.3 are independently selected from the group consisting of H, --CH.sub.3, --OCH.sub.3 and --OC.sub.2 H.sub.5 and R.sub.4 is selected from the group consisting of --OCH.sub.3 and --OC.sub.2 H.sub.5.

Find Patent Forward Citations

Priestley, Eldon. (1981). Method of depositing a silicon oxide dielectric layer (U.S. Patent No. 4282268). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4282268

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