The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 1981
Filed:
Dec. 28, 1979
Henry I Schanzer, Edison, NJ (US);
Roger G Stewart, Neshanic Station, NJ (US);
RCA Corporation, New York, NY (US);
Abstract
A charge is placed on the floating substrate of an insulated-gate field-effect transistor IGFET by applying, to the source of the IGFET, a signal making a first transition between first (V.sub.1) and second (V.sub.2) voltages and a second transition between the second voltage and a third voltage (V.sub.3) which is intermediate V.sub.1 and V.sub.2. The first transition is of a polarity and magnitude to forward bias the source-to-substrate junction of the IGFET and establishes a first level (L.sub.1) at the substrate region close to said second voltage. The second transition causes the source potential to go to V.sub.3 but the source-to-substrate junction is reverse biased and the substrate potential remains at a level (L.sub.2) which is intermediate L.sub.1 and V.sub.3. Consequently, the source to substrate junction remains isolated for values of signals applied to the source in the range between V.sub.1 and L.sub.2.