The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 1981
Filed:
Oct. 11, 1979
Applicant:
Inventors:
Perry W Lou, Houston, TX (US);
James E Ponder, Cat Spring, TX (US);
Graham S Tubbs, Houston, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
29571 ; 29578 ; 148-15 ; 148174 ; 148187 ; 148188 ; 357 23 ; 357 41 ; 357 51 ; 357 59 ; 357 91 ;
Abstract
An improved MOS device and method of making it are provided which utilize basically the standard N-chanel self-aligned silicon gate structure and process with implants for self-alignment, modified to allow three levels of interconnects. A P-type substrate is used as the starting material, with N+ source and drain regions defined prior to a polycrystalline silicon gate; thus the source and drain may run under polysilicon. Self-aligning implants after the polysilicon is defined produce the advantages of self-aligned gates.