The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 1981

Filed:

Aug. 08, 1979
Applicant:
Inventors:

Donald R Scifres, Los Altos, CA (US);

Fernando A Ponce, Stanford, CA (US);

G A Connell, Cupertino, CA (US);

William Streifer, Palo Alto, CA (US);

Assignee:

Xerox Corporation, Stamford, CT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
331 / ; 331 / ; 350164 ; 357 17 ;
Abstract

A multilayered reflector structure deposited on the light emitting surface of a semiconductor electroluminescent device and consecutively comprising a layer of low refractive index material, a layer of intermediate refractive index material and a layer of high refractive index material. Ablative means remove and form an aperture in the outer high index layer at the region of optical radiation emission from said device whereby the level of reflectivity is highest at the center of the aperture as compared to structure regions adjacent to the aperture. In this manner, fundamental mode stabilization may be achieved. Also disclosed is a nonablated three layered reflector structure.


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