The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 1981
Filed:
Oct. 20, 1978
Applicant:
Inventors:
Edmund A Reese, Sugar Land, TX (US);
Lionel S White, Jr, Houston, TX (US);
Joseph C McAlexander, III, Sugar Land, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ;
U.S. Cl.
CPC ...
307279 ; 3072385 ;
Abstract
A random access read/write MOS memory device employs bistable latch or buffer circuits as the address inputs, data inputs, and the like. The buffers function to latch the data or address to allow the inputs to change states. The buffer is activated by TTL level inputs, exhibits low capacitance at its input, and switches states fast enough to allow rapid multiplexing of the addresses. Noise immunity is improved by selective implants of some of the transistors, and by use of filter capacitors connected between input nodes and Vss rather than Vdd.