The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 1981
Filed:
Aug. 06, 1979
Applicant:
Inventor:
S Robert Steele, Sudbury, MA (US);
Assignee:
Raytheon Company, Lexington, MA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148175 ; 148174 ; 156610 ; 156612 ; 252 / ; 357 13 ; 357 15 ; 357 64 ; 357 89 ; 427 85 ; 427 87 ; 4272551 ; 4272481 ;
Abstract
A method for producing doped gallium arsenide semiconductor layers for semiconductor devices wherein a predetermined flow of a reactive substance is directed over a material having a dopant and a relatively low vapor pressure. The reactive substance chemically reacts with the material to produce a corresponding flow of a doping vapor. The doped gallium arsenide semiconductor layer is deposited on a gallium arsenide substrate by vapor phase epitaxy from material including the doping vapor. With such method, accurate control of the magnitude of the dopant is obtained by control of the reactive substance, the doping material being supplied by a non-volatile source.