The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 1981
Filed:
Dec. 28, 1978
Applicant:
Inventors:
Assignee:
Fujitsu Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
307455 ; 307D / ; 357 40 ; 357 45 ;
Abstract
A large scale semiconductor integrated circuit device comprising plural transistors and resistors formed in one semiconductor substrate, and many emitter-coupled circuits formed by connecting the transistors and resistors with a double metallic layer on the substrate surface. Moreover, between the groups and respective input/output terminals, large scale transistors are provided for outputting the emitter-follower circuits. These groups containing the emitter coupled circuits are connected to the input/output terminals by the double metallic wiring layer.
Ohno, Kenichi. (1981). Large scale semiconductor integrated circuit device (U.S. Patent No. 4278897). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4278897
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile