The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 1981
Filed:
Jan. 30, 1980
Applicant:
Inventor:
Brown F Williams, Princeton, NJ (US);
Assignee:
RCA Corporation, New York, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; B05D / ;
U.S. Cl.
CPC ...
427 75 ; 427 74 ; 427 91 ; 427 93 ;
Abstract
A method of forming an electrical contact to a shallow junction silicon semiconductor device such as a solar cell comprises evaporating a sufficient amount of a metal which upon heating will form a silicide with the silicon to a predetermined depth and thereafter oxidizing the surface of the silicon so as to form a shallower junction in the unoxidized portions of said silicon. The portion of the silicon device which has formed the silicide does not oxidize and forms an electrical contact to the silicon. In addition, the metal silicide can have additional metal plated thereto to lower the sheet resistivity and resistance of the electrical contact.