The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 1981

Filed:

Dec. 01, 1978
Applicant:
Inventor:

Gurnam Singh, Willow Grove, PA (US);

Assignee:

Honeywell Inc., Minneapolis, MN (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B23K / ; H05K / ;
U.S. Cl.
CPC ...
228123 ; 2282 / ; 2282 / ; 228124 ; 174 5061 ;
Abstract

A method for low temperature bonding of silicon and silicon on sapphire and spinel to nickel and nickel steel using a layered structure with an aluminum interface between the nickel or nickel steel and the silicon. The bonding is achieved in a reducing atmosphere using a temperature of 640 to 650 degrees C. with a pressure of 100 to 150 psi on the layered structure for a period of approximately five minutes with a subsequent cooling to avoid strains in the bond. An example of the transducer apparatus utilizing such a bonding technique includes a nickel steel housing and a silicon on spinel transducer wafer having a silicon peripheral pad with an aluminum layer bonding the silicon pad to the nickel steel housing.


Find Patent Forward Citations

Singh, Gurnam. (1981). Method for low temperature bonding of silicon and silicon on sapphire (U.S. Patent No. 4278195). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4278195

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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